- 您现在的位置：买卖IC网 > Sheet目录377 > 2N7002K-7 (Diodes Inc)MOSFET N-CH 60V 300MA SOT23-3
2N7002K
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Units
V
V
Continuous Drain Current (Note 6) V GS = 10V
Continuous Drain Current (Note 6) V GS = 5V
Steady
State
t<5s
Steady
State
t<5s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
380
300
430
340
310
240
350
270
mA
mA
mA
mA
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%) (Note 6)
I S
I DM
0.5
1.2
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Symbol
P D
Value
370
Units
mW
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6 )
Operating and Storage Temperature Range
Steady State
t<5s
Steady State
t<5s
R θ JA
P D
R θ JA
R θ JC
T J, T STG
357
292
540
240
197
91
-55 to +150
°C/W
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
—
—
—
—
—
—
1.0
±10
V
μA
μA
V GS = 0V, I D = 10μA
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS(ON)
|Y fs |
V SD
1.0
—
80
—
1.6
—
—
—
0.75
2.5
2.0
3.0
—
1.1
V
?
ms
V
V DS = 10V, I D = 1mA
V GS = 10V, I D = 0.5A
V GS = 5V, I D = 0.05A
V DS =10V, I D = 0.2A
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
30
4.2
2.9
133
0.3
0.2
0.08
3.9
3.4
15.7
9.9
50
25
5.0
—
—
—
—
—
—
—
—
pF
pF
pF
?
nC
nC
nC
ns
ns
ns
ns
V DS = 25V, V GS = 0V
f = 1.0MHz
f = 1MHz , V GS = 0V, V DS = 0V
V GS = 4.5V, V DS = 10V,
I D = 250mA
V DD = 30V, V GS = 10V,
R G = 25 ? , I D = 200mA
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2N7002K
Document number: DS30896 Rev. 14 - 2
2 of 6
www.diodes.com
August 2013
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
2N7002KT3G
MOSFET N-CH 60V 320MA SOT-23
2N7002KW
MOSFET N-CH 60V 310MA SOT323
2N7002K
MOSFET N-CH 60V 115MA SOT23
2N7002LT1
MOSFET N-CH 60V 115MA SOT-23
2N7002T-7
MOSFET N-CH 60V 115MA SOT-523
2N7002TC
MOSFET N-CHAN 60V SOT23-3
2N7002T
MOSFET N-CH 60V 115MA SOT-523F
2N7002VA
MOSF N CH DL 60V 280MA SOT 563F
相关代理商/技术参数
2N7002K-7-01
制造商:DIODES 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SOT-23 (LEADFREE)
2N7002K-7-31
制造商:DIODES 功能描述:N-N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SOT-23 (LEADFREE)
2N7002K-7-99
制造商:Diodes Zetex 功能描述:2N 7002 K-7-99 SOT23#
2N7002K-7-99-F
制造商:DIODES 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SOT-23 (LEADFREE) FOR AUTOMOTIVE
2N7002K-7-F
制造商:DIODES 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SOT-23 (LEADFREE)
2N7002K-7-F-31
制造商:DIODES 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SOT-23 (LEADFREE)
2N7002K-7-F-82
制造商:Diodes Zetex 功能描述:2N7002K-7-F-82
2N7002KA
制造商:KEC 制造商全称:KEC(Korea Electronics) 功能描述:N Channel MOSFET